The Influence of Nitrogen Content on ZnO Thin Film Transistor
碩士 === 大同大學 === 光電工程研究所 === 102 === Our group had developed a Zinc Oxide thin-film transistor with zinc oxide thin film transistors with poor electrical characteristics, transistor threshold voltage-13.65V and subthreshold swing of 2.8V/decade, which was not appropriate for low power consumption con...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/67ts2t |