The Study of the Selective Electroplating of Cu Bumps on Si Substrate

• Main Authors: Lo-Lin Chen, 陳洛嶙
• Other Authors: Shih-Chieh Hsu
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/u4n9s9

碩士 === 淡江大學 === 化學工程與材料工程學系碩士班 === 102 === The purpose of the study is developing the selective electroplating technique. For the manufacture of semiconductor, we can successfully fabricate the copper bumps on the pre-defined pattern seed layer without using barriers by the selective electroplating technique. In the study, we can successfully fabricate the copper bumps by using galvanostatic methods. The contours of the copper bumps were measured by the Alpha-step profilometer. The thickness of the copper bumps decreases with increasing current density. In further investigations, it is found that the copper bumps with obtuse edges obtained if the electroplating current density is lower than 45 mA/cm2. At the current density of 45 mA/cm2, a portion of the edge of the copper bumps was slightly protruded as the transition stage. The edge of the copper bumps was obviously protruded when deposited using current density higher than 45 mA/cm2. It further discusses with edge effect and charge aggregation effect. In addition, the morphology and the similarity of the copper bumps at 50 mA/cm2 are the best from the results.