Study of the Microstructure and Optical properties for GeSbTe chalcogenides by Photo-assisted Wet Etching
碩士 === 國立臺北科技大學 === 材料及資源工程系研究所 === 102 === The surface of solar cell will generally have an anti-reflective layer structure to reduce the incidence of the reflection. Increasing the incident light penetration in the solar cell modules can achieve higher photoelectric conversion efficiency. Few...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/m8j8n4 |
| Summary: | 碩士 === 國立臺北科技大學 === 材料及資源工程系研究所 === 102 === The surface of solar cell will generally have an anti-reflective layer structure to reduce the incidence of the reflection. Increasing the incident light penetration in the solar cell modules can achieve higher photoelectric conversion efficiency. Few papers explore the etching mechanisms of Ge2Sb2Te5 thin films and the related optic properties of the films. The surface morphology and surface roughness changes by etching the thin films with and without light source implied the possible application of the films on the anti-reflective layer in devices. In this study, the Ge2Sb2Te5 films are deposited by direct current (DC) sputtering system. The visible light was used to assist etching of Ge2Sb2Te5 films in an aqueous HNO3 solution. The SEM、AFM、UV-Visible spectroscopy were used to analyze of the surface and optical properties of
the thin films. The film surface was also observed after photo-assisted etching by the same measurement tools.
It was found that Ge2Sb2Te5 film can result in better porous structure by aqueous etching process. The ooptimal concentration of the etching solution was 20 wt%. The film thickness、porous size、roughness does not change with increasing illumination intensity is inversely proportional to the trend continuing.Throughout the same etching time with different photo-assisted etching processes shows that the film thickness, porous size, surface roughness were more changed than the non-photo etching process. We can speculate and propose a model of the film etching behavior of Ge2Sb2Te5 film with nitric acid etching solution.
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