Novel Bio-Organic Field-Effect Transistor (BioFET) Memory with Collagen/1-Aminopyrene complexes as Dielectric Layer

碩士 === 國立臺北科技大學 === 有機高分子研究所 === 102 === Organic field-effect transistor devices have gained much attention in recent years attract due to their advantages of flexibility, light weight, solution processibility and low manufacturing cost. The field-effect mobility (μFET) is mainly affected by the org...

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Main Authors: Yun-Yi Chuang, 莊允怡
Other Authors: 郭霽慶
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/yrj76r
id ndltd-TW-102TIT05310010
record_format oai_dc
spelling ndltd-TW-102TIT053100102019-05-15T21:42:06Z http://ndltd.ncl.edu.tw/handle/yrj76r Novel Bio-Organic Field-Effect Transistor (BioFET) Memory with Collagen/1-Aminopyrene complexes as Dielectric Layer 膠原蛋白與1-氨基芘之複合物介電層應用於生物有機場效電晶型記憶體元件 Yun-Yi Chuang 莊允怡 碩士 國立臺北科技大學 有機高分子研究所 102 Organic field-effect transistor devices have gained much attention in recent years attract due to their advantages of flexibility, light weight, solution processibility and low manufacturing cost. The field-effect mobility (μFET) is mainly affected by the organic material in the active layer. The dielectric material is another factor able to influence the mobility value of OFETs. However, some inorganic or organic materials in device are non-environmentally, many electronic litters are generated from inorganic device. Therefore, in this study, we choose natural biological proteins collagen as dielectric material. The advantage of collagen are biocompatible, bioresorbable, biodegradable, and non-toxic. The experiment was divided into two parts. The first part, cationic surfactant CTMA(Hexadecyltrimethylammonium chloride) were added into collagen and the cationic surfactant CTMA - collagen complexes as gate dielectrics to improve collagen water sensitive and reduce the hydrophilic of collagen, the electrical performance was enhanced. From the experimental results proved that the 3.0wt%-CTMA show an average mobility of 3.36×10-2 cm2V-1s-1 and on/off ratio can reach 2.7×106. Another even more striking is that previously no one used collagen to fabricate transistor type memory. The second part, non-water soluble 1-aminopyrene to be gate electret via CTMA brought into collagen water solution. Collagen-CTMA-1-aminopyrene composite films were used to fabricate OFETs type memory device. From the results, the ranges of bias hysteresis were proportional to contents of 1-aminopyrene means memory performance upgrade also followed content of 1-aminopyrene. Since the collagen belongs biological material. The device in bio-medical sensing or organisms of medical materials can have a very good development in the future. 郭霽慶 2014 學位論文 ; thesis 63 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立臺北科技大學 === 有機高分子研究所 === 102 === Organic field-effect transistor devices have gained much attention in recent years attract due to their advantages of flexibility, light weight, solution processibility and low manufacturing cost. The field-effect mobility (μFET) is mainly affected by the organic material in the active layer. The dielectric material is another factor able to influence the mobility value of OFETs. However, some inorganic or organic materials in device are non-environmentally, many electronic litters are generated from inorganic device. Therefore, in this study, we choose natural biological proteins collagen as dielectric material. The advantage of collagen are biocompatible, bioresorbable, biodegradable, and non-toxic. The experiment was divided into two parts. The first part, cationic surfactant CTMA(Hexadecyltrimethylammonium chloride) were added into collagen and the cationic surfactant CTMA - collagen complexes as gate dielectrics to improve collagen water sensitive and reduce the hydrophilic of collagen, the electrical performance was enhanced. From the experimental results proved that the 3.0wt%-CTMA show an average mobility of 3.36×10-2 cm2V-1s-1 and on/off ratio can reach 2.7×106. Another even more striking is that previously no one used collagen to fabricate transistor type memory. The second part, non-water soluble 1-aminopyrene to be gate electret via CTMA brought into collagen water solution. Collagen-CTMA-1-aminopyrene composite films were used to fabricate OFETs type memory device. From the results, the ranges of bias hysteresis were proportional to contents of 1-aminopyrene means memory performance upgrade also followed content of 1-aminopyrene. Since the collagen belongs biological material. The device in bio-medical sensing or organisms of medical materials can have a very good development in the future.
author2 郭霽慶
author_facet 郭霽慶
Yun-Yi Chuang
莊允怡
author Yun-Yi Chuang
莊允怡
spellingShingle Yun-Yi Chuang
莊允怡
Novel Bio-Organic Field-Effect Transistor (BioFET) Memory with Collagen/1-Aminopyrene complexes as Dielectric Layer
author_sort Yun-Yi Chuang
title Novel Bio-Organic Field-Effect Transistor (BioFET) Memory with Collagen/1-Aminopyrene complexes as Dielectric Layer
title_short Novel Bio-Organic Field-Effect Transistor (BioFET) Memory with Collagen/1-Aminopyrene complexes as Dielectric Layer
title_full Novel Bio-Organic Field-Effect Transistor (BioFET) Memory with Collagen/1-Aminopyrene complexes as Dielectric Layer
title_fullStr Novel Bio-Organic Field-Effect Transistor (BioFET) Memory with Collagen/1-Aminopyrene complexes as Dielectric Layer
title_full_unstemmed Novel Bio-Organic Field-Effect Transistor (BioFET) Memory with Collagen/1-Aminopyrene complexes as Dielectric Layer
title_sort novel bio-organic field-effect transistor (biofet) memory with collagen/1-aminopyrene complexes as dielectric layer
publishDate 2014
url http://ndltd.ncl.edu.tw/handle/yrj76r
work_keys_str_mv AT yunyichuang novelbioorganicfieldeffecttransistorbiofetmemorywithcollagen1aminopyrenecomplexesasdielectriclayer
AT zhuāngyǔnyí novelbioorganicfieldeffecttransistorbiofetmemorywithcollagen1aminopyrenecomplexesasdielectriclayer
AT yunyichuang jiāoyuándànbáiyǔ1ānjīpízhīfùhéwùjièdiàncéngyīngyòngyúshēngwùyǒujīchǎngxiàodiànjīngxíngjìyìtǐyuánjiàn
AT zhuāngyǔnyí jiāoyuándànbáiyǔ1ānjīpízhīfùhéwùjièdiàncéngyīngyòngyúshēngwùyǒujīchǎngxiàodiànjīngxíngjìyìtǐyuánjiàn
_version_ 1719117817315328000