Effects of Drift-Region design on the Reliability of 800V LDMOS

Effects of Drift-Region design on the Reliability of 800V LDMOS

碩士 === 亞洲大學 === 資訊工程學系 === 102

Bibliographic Details
Main Author:	Vivek Ningaraju
Other Authors:	Gene sheu
Format:	Others
Language:	en_US
Published:	2014
Online Access:	http://ndltd.ncl.edu.tw/handle/21349149177477554583

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