Development of SiC Schottky Diode with Linear P-top rings and Optimization of NLD 40V for Higher breakdown voltage and lower On-Resistance
碩士 === 亞洲大學 === 資訊工程學系 === 102 === In this thesis, a silicon carbide schottky diode with linearly doped p-top ring has been developed and simulated using Silvaco (atlas) TCAD simulator. The comparison of breakdown voltage, forward voltage and electric field has been done for proposed structure i.e....
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/e75nk8 |