Investigation of Near-UV InGaN Light-Emitting Diodes with Different Aluminum mole fraction quantum barrier

碩士 === 南台科技大學 === 電子工程系 === 102 === In this research, the nitride-based near-UV light-emitting diodes (LEDs) with different aluminum mole fraction quantum barrier , and observe the electrical and optical properties of different aluminum mole fraction quantum barrier. The aluminum mole fraction of LE...

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Bibliographic Details
Main Authors: Hsiang ,chin-chi, 向勁齊
Other Authors: Chiou, yu-zung
Format: Others
Language:zh-TW
Online Access:http://ndltd.ncl.edu.tw/handle/a7wx3m