| Summary: | 碩士 === 南台科技大學 === 光電工程系 === 102 === High-efficiency light-emitting diode (LED) had became the main trends of the present study.In this thesis, We study how to increase light extraction efficiency of light-emitting diode increases.The theoretical basis of the research methods was the total internal reflection (Total Internal Reflection, TIR) of the grain size was reduced.In order to improve this factor, the research focused on improving its internal structure to increase the efficiency of light-emitting diodes. Explore the impact of differences in the two different heat treatment process, the electrical and optical properties.
In the analysis of material properties,we use the transmission line model (TLM) measuring the electrical characteristics of the film and x-ray diffraction (XRD) analysis of the crystal film quality and with UV / Vis spectrophotometer (UV / VIS spectrometer) was measured optical transmission properties of the film, scanning electron microscopy (SEM) to observe the variations of the film surface.Using the above measurements to investigate the crystal structure to make quality and optical, electrical and surface properties of the films, and these result in component design.
In this study,we used electron beam evaporation (E-beam) to deposited the transparent conductive film, a thin film of aluminum zinc oxide (AZO) film of silver (Ag) as an interleaved multi-layer transparent electrode deposition, and thus AZO / Ag / AZO multilayer structure as N-type electrode GaN (n-GaN) and the P-type GaN (p-GaN) transmission line elements, and to study the characteristics of the transparent conductive film and the contact between the semiconductor.First, the film thickness at the fixed temperature, by depositing a thin film grown in different environmental conditions, the heat treatment made sample by high temperature in the annealing furnace tube . By changing the heat treatment parameters and observe the changes of electrical resistance.The effects of these parameters on the optical properties of the film and find the best optical properties, this film finally grow on gallium nitride (GaN) light-emitting diodes.It’s observed that the resistivity of 5.14 ×10-3 Ω-cm, the contact resistance of 0.0883 Ω-cm2 and approximately 85.7% at 460nm film transmittance via annealing the Oxygen (O2).
|
|---|
