Design of the X-Band and K-Band Low Noise Amplifiers

• Main Authors: Yu-Jhe Cai, 蔡雨哲
• Other Authors: Jyh Sheen
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/djsznk

碩士 === 國立虎尾科技大學 === 電子工程系碩士班 === 102 === In this thesis, the main research focused on the designs of K-band and X-band low noise amplifiers(LNAs)。The circuits have been realized using WIN Semiconductors 0.15um pHEMT process. The LNAs adopted two kinds of configurations in this thesis. They are current reused technique and cascode technique. This research compares simulation and measurement results. A K-Band low noise amplifier was designed for the application of automotive radar systems. The adopted structure is the current reused technique, which provides a high gain, good input impedance match, and low power for the amplifier circuit. A voltage source of 2.5V is applied with power consumption 330mW. This amplifier achieved the following simulation results gain 9dB, noise figure 4.32 dB, input return loss -10.5dB, output return loss -5.54dB, and isolation -18.69dB. The other low noise amplifier was designed in X-Band for satellite communications and Electron Paramagnetic Resonance(EPR).The cascode architecture was employed to achieve a high gain, high isolation, low power, and small reduce save chip area. A voltage source of 2.5V is applied with power consumption 161.25mW. This low noise amplifier achieves the following simulation results gain 11.8 dB, noise figure 1.3 dB, input return loss -16.5 dB, output return loss -14.1dB,and isolation -20 dB.