| Summary: | 碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 102 === In this thesis, we use of RF magnetron co-sputtering system to deposite aluminum nitride - zinc oxide, magnesium oxide - zinc oxide target respectively that to produce a non-doped ZnO films and aluminum nitride - zinc oxide and magnesium oxide - zinc oxide were splashing plating film, and produce aluminum nitride - zinc oxide and magnesium oxide - zinc oxide double heterostructure for double hetero-junction(DH) structure with different active layer of thickness , the use of photoluminescence(PL) measurements and Hall measurements investigate the oxidation of its two structures NBE zinc film strength and electrical properties of elements in the aluminum nitride - zinc oxide aspect double hetero structure, the intensity values found NBE radiation with a short wavelength while reducing the thickness of the active layer area and having a Full Width half-maxmaiun decreased with wider phenomenon Hall Seoul measuring the electrical characteristics of the film carrier concentration is a gradual decline, reducing the thickness of the active layer from the current-Voltage curve measurements found to reduce the series resistance and the starting Voltage electrical excitation in fluorescence measurements observed in the active layer structure under 100nm a light emitting wavelength of 420 nm and 550 nm, CIE color coordinates of white light (CIE 1931 x = 0.351, y = 0.340), when the thickness of the active layer decreased, the relative intensity will cause a gradual decrease in the long wavelength region, a short wavelength light emission peak half a decrease in the aspect of the phenomenon, and when the active layer is reduced to 10nm, due to the impact of the active layer by diffusion of aluminum atoms, can effectively suppress long wavelength defects, making mechanism based light-emitting element band mechanism and energy transfer between the metal band in electrical excitation 403 nm wavelength light in the measured fluorescence was measured as a blue-violet light, indicating that the decline in the active layer can effectively enhance its short wavelength emission intensity. The magnesium oxide - zinc oxide, the photoluminescence measurements from found two major flaws peaking at 480 nm of zinc vacancies, oxygen vacancies position 550 nm, the linear fit through the results found that inhibition of oxygen vacancies trends, measure its film carrier concentration also declined phenomenon, and current components - Voltage curve can be found, with the decline in the active layer, followed by the series resistance and the starting Voltage drop, respectively, in the electrical excitation fluorescence measurements found , the structure of the active layer 100 nm 480 nm 550 nm and the light emission wavelength, CIE color coordinates Pictured warm white (CIE1931 x = 0.346, y = 0.367), and when the active layer is decreased to 10 nm, the CIE color coordinates of FIG. for the orange light (CIE1931 x = 0.416, y = 0.402), due to the proliferation of magnesium atoms is more obvious, making the light-emitting element by vacuum heat treatment after the peak in Ga-O bond became a major defect emission peak.
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