The Device Manufacturing and Electrical Characterization of Tantalum Oxide-based RRAM for Embedded CMOS Process

• Main Authors: Hsu, Jhih-Yong, 許志勇
• Other Authors: Lin, Yu-Hsien
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/47326033066243472657

碩士 === 國立聯合大學 === 電子工程學系碩士班 === 102 === Owing to the advances in technology, people demand for electronic products increasingly. In order to achieve better performance, the size of semiconductor devices are scaled down. In addition to MOSFET, memory is also play an important role in various of electronic products. The memory demand for speed and capacity Increasingly, the conventional memory has been unable to consistent with their needs. In the current development of new non-volatile memory, RRAM has a simple structure, low process cost, high-speed operation, low-power consumption, high process scaling capability, Compatible with COMS process etc., so RRAM has a great potential to be a non-volatile memory of the next generation. The successful integration of CMOS process to make tantalum Oxide-based RRAM in microns effective area. Then identifying the best operating conditions of device on different compliance current. By using fixed operating conditions to measurement memory reliability characteristics on different thickness of tantalum Oxide-based RRAM , including Time Dependent Dielectric Breakdown (TDDB), read disturb immunity, data retention, switching endurance and Random Telegraph Noise (RTN), and compare their difference. In summary, the tantalum Oxide-based RRAM have current overshoot problems in 1R structure. Therefore, the device need large than 1mA of compliance current to operate. And the device has ultra low voltage (< 1V) switching in the 1mA of compliance current. The thicker oxide of device has large forming voltage, high resistance ratio, long read disturb immunity, long data retention, but worse switching endurance. We also measurement the two levels RTN of tantalum oxide trap, and calculate the trap position, current fluctuation, current amplitude.