The fabrication and responsivity study of MIS photo-detector by using ITO conductive Layer
碩士 === 國立高雄大學 === 電機工程學系碩士班 === 102 === As know that indium tin oxide (ITO) is a good conductive material, a high transmittance in the visible light range, good adhesion with Si substrate, structure hardness and chemical inert, these properties make ITO a candidate for optoelectronic devices applica...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73772411265651511793 |
| Summary: | 碩士 === 國立高雄大學 === 電機工程學系碩士班 === 102 === As know that indium tin oxide (ITO) is a good conductive material, a high transmittance in the visible light range, good adhesion with Si substrate, structure hardness and chemical inert, these properties make ITO a candidate for optoelectronic devices application. This thesis focused on the demonstration of the fabrication of a metal-insulate-semiconductor (MIS) photo-detector using ITO as the transparent conductive layer and its characterization of photo-responsivity. Results of current-voltage (I-V) characteristic measurements by illuminating monochromatic light showed that photo-responsivity as high as 0.8 A/W was achieved at wavelength around 900 nm-1000 nm. It proved that ITO conductive layer can effectively promote the photo-responsivity of a MIS photo-detector and the results are helpful to the development of a high efficient photo-detector.
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