The fabrication and characteristics of SOG integrated capacitance

• Main Authors: Sen-yu Hsiao, 蕭森宇
• Other Authors: Ming-Chang Shih
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/41837288668585914915

碩士 === 國立高雄大學 === 電機工程學系碩士班 === 102 === Integrated passive components such as resistors, inductors and capacitors are attracted interest to IC packaging industry for requirement of miniaturizing the size and weight of system assembly. In this paper, we demonstration the fabrication of an integrated capacitor by using SOG (spin on glass) as the insulating material which are expected to enhance the capacitor characteristics; especially to achieve high dielectric constant and to simply the process flow and cost. In this thesis we demonstrated the fabrication of an integrated capacitor using SOG as the dielectric material. The results of SOG dielectric layer characterization by using scanning electron microscopy (SEM), and capacitance-voltage (C-V) characteristic measurement were present. It shows that the relative dielectric constant of the SOG layer can achieve as high as 3.8 by annealed at 420 C0 for 30 minutes. In conclusion, the issues of applications of this integrated SOG capacitor to the development of advanced IC package industry were discussed. Keyword: SOG (spin on glass)，E-beam or E-Gun Coater，Capacitance，Passive Components