Study on Diamond Dressing of Soft and Ductile Polyurethane Pad

• Main Authors: Kuan-Chung Chen, 陳冠中
• Other Authors: Chao-Chang Chen
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/00633504062852521370

碩士 === 國立臺灣科技大學 === 機械工程系 === 102 === Because of rapid development of new technology, the wafer size has been enlarged from 12 to 18 inch in near future, and the semiconductor products have become essential for industry. With the decreasing of line width of integrated circuit, chemical mechanical planarization (CMP) process has become a critical technique in semiconductor manufacturing. The diamond dressing model with polishing pad of CMP has recently been concentrated for improving CMP efficiency. The polishing pad is a compressible and elastic material. This study aims to establish a dressing model and evaluate the plowing ratio and chip thickness generated by a special designed diamond dresser. The solid and non-porous polyurethane polishing pad and the dresser with 5 line-up diamond dresser are used to investigate the pad plowing effect in dressing process. Experimental results have shown that the plowing initially controls the dressing mechanism. Initial higher pressures such as 5psi and 10psi makes the pad material to deform easily compared with that of a lower pressure 2.5psi. With 5 psi down pressure, the diamond grit has the highest shear angle to remove chip from pad surface easily. In the SEM observation, the chips at 2.5psi and 5psi are continuous, but the chip at 10psi is discontinuous and thicker. Also the chip at 10psi looks like to have a plastic deformation due to the high pressure applied. Result of this study can be further need for constructing pad dressing model and diamond dresser design.