| Summary: | 碩士 === 國立臺灣科技大學 === 化學工程系 === 102 === Solvent B and its synthetic derivatives have been playing attention due to their distinct pharmaceutical activities and broad applications in synthetic perfumes and flavors. Solvent B is also applied as an effective solvent for the dissolution of polymer, which is used in the organic thin film transistors (OTFT) process. The impurities from solvent and polymer will be conducted into OTFT devices via spin coating and vapor deposition processes. It causes the shortening of lifetime and yield rate of OTFT device due to a shift in threshold voltage, hysteresis phenomenon, and so on. Therefore, this work focused on the analysis of impurity, yield rate of impurity, procedure for impurity removal, and storage method.
In this work, the gas chromatography equipped with flame ionization detector (GC-FID), gas chromatography equipped with mass spectrometer (GC-MS), UV/VIS spectrophotometer (UV/Vis), and ion exchange chromatography (IC) were applied to analyze the composition of impurities and the yield rate of impurities. Effects of UV illumination and heat on the deterioration of Solvent B and yield rate of impurity were investigated under variant atmospheres. The results indicated the N2-purge procedure can hinder water and oxygen from entering Solvent B, resulting in the retardation in the yield of impurity. 90% of organic impurities were able to be adsorbed by the silica gel column. For the treatment of anion impurities, we use the macroporous ion exchange resins to reduce anions concentration of Solvent B, such as chloride, phosphate and sulphate, less than the detection limits of IC (20 ppb). The different analysis methods for determination of anions in organic materials were further developed successfully. The reliability and uncertainty of these methods were studied in detail.
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