Characterization and Improvement in Reliability and Sensitivity of Metal-Oxide-Semiconductor Devices with Ultrathin High-k Dielectrics
博士 === 國立臺灣大學 === 電子工程學研究所 === 102 === With the aggressive downscaling of MOS devices in semiconductor industry, the high-k gate dielectrics continuously play significant roles to achieve small equivalent oxide thickness for high-performance logic technology. The low manufacturing cost and low-tempe...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97784113141737611057 |