Investigation of Gate Dielectrics and Carbon Interstitials on 4H-SiC MOS Capacitors
博士 === 國立臺灣大學 === 電子工程學研究所 === 102 === In this dissertation, we have investigated different gate dielectrics on 4H-SiC, such as Al2O3, HfO2, and SiO2. At first, high-κ dielectric was deposited on SiC for MOS capacitors. The hysteresis of capacitance-voltage (C-V) curves is small and charge trapping...
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39541665320353954065 |