Thermal Behaviors of Interface Layer in ultra-thin HfO2 film grown on SiGe/Si substrate
碩士 === 國立臺灣大學 === 電子工程學研究所 === 102 === In the recent year, hafnium dioxide (HfO2) has been investigating and applying on gate dielectric of CMOS devices to improve the scaling difficult for SiO2. To develop the higher speed application, strained SiGe is the suggested channel material due to its high...
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88556049848872892213 |