A study on the property of RRAM with single and double layer metal oxides
碩士 === 國立臺灣大學 === 物理研究所 === 102 === In this thesis we report the study of the switching behavior of resistive random access memory (RRAM) made by using single and double layers metal oxides. In this study, NiO is made by oxidization of Ni thin film that was thermally evaporated on Si substrate, Cu...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44821454377766634250 |