The Development and Application of Non-Equilibrium Quantum Transport Modeling for Transistors

• Main Authors: Yen-Chun Lin, 林彥均
• Other Authors: Yuh-Renn Wu
• Format: Others
• Language: en_US
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/56235264553425998791

碩士 === 國立臺灣大學 === 光電工程學研究所 === 102 === This thesis studies the quantum transport effect by solving the Poisson and Schrodinger equation self-consistently. As we know, as the semiconductor scaling technology enters the nanoscale world, the classical carrier transport model by solving Poisson and drift-diffusion equation model becomes less valid, due to the ignorance of quantum wave pictures. To develop the program for modeling the nanostructure, the finite difference method with the simpli ed Schrodinger equation and considering the scattering effect is used for developing the program. Next, the nonequilibrium green function method is used for boundary condition and they are applied to solve the Schrodinger equation. The key feature of this study is successfully adding the scattering mechanism into the Schrodinger solver for energy relaxation in different energies and solve self-consistently. The last step is the Poisson equation and the Schrodinger Hamiltonian are self-consistently iterated to get the carrier density, current density, and potential of the device. Several device structures are examined, including the tunneling structures, resonant tunneling devices, tunneling eld effect transistors, and n-i-n structures.