Growth of graphene and related materials through chemical vapor deposition for some optoelectronic applications

• Main Authors: Lee, Dou, 李鐸
• Other Authors: Hwang, Jih-Shang
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/19360340679222040894

碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 102 === Our experiment use CVD(chemical vapor deposition)to grow single crystal graphene and relative optoelectric application,the basic concept takes the silver nanoparticle as catalyst and the characteristic of low carbon-absorbed copper foil.Observing the single crystal grapheme with scanning electron microscope and discussing the growing mechanism are one of our target to fulfill. The second topic is making silicon nanowire carbonized by CVD.Our result shows the silicon nanowire change into silicon carbide,and still retain the property of field emission.The silicon carbide’s field emission starts at 3 V/m with stable current emission.Furthermore,silicon carbide nanowire is also a good thermal conductor.We demonstrate the ability of fast annealing and cooling up to 767 degree,and retain steady infrared emission.This discovery implies the application of infared emitter.