The characteristics and leakage current mechanism analysis of MOS structure with Zr incorporated Y2O3 stack high-k dielectric layer
碩士 === 國立臺灣師範大學 === 機電科技學系 === 102 === Y2O3 is a promising high-k (~12-18) material with wide band gap (5.5 eV), stable thermal stability, and low lattice mismatch between Y2O3 and Si. However, it is easy to form the interfacial layer because of the inter-diffusion between Y2O3 and Si, which lowers...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65061767524172185166 |