Adsorption and Thermal Decomposition of Thiophenol and Phenol on Ge(100)

碩士 === 國立臺灣師範大學 === 化學系 === 102 === The adsorption and thermal reactions of thiophenol (C6H5SH) and phenol (C6H5OH) on Ge(100) surface were studied with temperature programmed desorption (TPD) and X-ray photoelectron spectroscopy (XPS) using synchrotron radiation. The desorbed products of th...

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Main Authors: Jheng, Jhih-Wun, 鄭智文
Other Authors: Hung, Wei-Hsiu
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/88986450897225239143
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spelling ndltd-TW-102NTNU50650552016-05-22T04:40:27Z http://ndltd.ncl.edu.tw/handle/88986450897225239143 Adsorption and Thermal Decomposition of Thiophenol and Phenol on Ge(100) 苯硫酚與苯酚在Ge(100)表面的吸附與熱分解反應 Jheng, Jhih-Wun 鄭智文 碩士 國立臺灣師範大學 化學系 102 The adsorption and thermal reactions of thiophenol (C6H5SH) and phenol (C6H5OH) on Ge(100) surface were studied with temperature programmed desorption (TPD) and X-ray photoelectron spectroscopy (XPS) using synchrotron radiation. The desorbed products of thermal reactions could be measured by TPD, and the XPS was utilized to identify the surface species. Most of the thiophenol adsorbed on Ge(100) at 105 K dissociated into surface C6H5S(a) and H(a). The thiophenoxy group lay flat in the low-exposure regime and stood upright upon higher exposures. The chemsorbed and physorbed thiophenol appeared on the Ge(100) at larger exposures. The desorption products of C6H5SH were C6H5SH(g), H2(g), GeS(g), H2S(g), and C6H6(g). At 575K, the desorption of thiophenol resulted from the recombination of C6H5S(ad) and H(ad). The surface C6H5S(a) cleaved the carbon-sulfur bond to release the C6H5 bond and reacted with H to desorb benzene. According to the TPD spectra, we propose that benzene has two adsorption states. The desorption of hydrogen with recombination of H(ad) + H(ad) and some hydrogen reacted with surface S to become H2S(g).At 690K, GeS(g) desorbed from the surface due to the cleavage of the Ge-Ge bond. The adsorption features of phenol and thiophenol are almost the same, but the thermal decomposition reactions are different because the carbon-oxygen bond is stable. Phenoxy group cleaves the carbon-oxide bond to produce GeO(g) at higher temperature in the TPD spectra. Three desorption peaks in TPD spectra are observed due to recombination reactions. According to the experimental data and computational result, we propose the reactions mechanisms of C6H5SH and C6H5OH thermal reaction on Ge(100). Hung, Wei-Hsiu 洪偉修 2014 學位論文 ; thesis 84 zh-TW
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description 碩士 === 國立臺灣師範大學 === 化學系 === 102 === The adsorption and thermal reactions of thiophenol (C6H5SH) and phenol (C6H5OH) on Ge(100) surface were studied with temperature programmed desorption (TPD) and X-ray photoelectron spectroscopy (XPS) using synchrotron radiation. The desorbed products of thermal reactions could be measured by TPD, and the XPS was utilized to identify the surface species. Most of the thiophenol adsorbed on Ge(100) at 105 K dissociated into surface C6H5S(a) and H(a). The thiophenoxy group lay flat in the low-exposure regime and stood upright upon higher exposures. The chemsorbed and physorbed thiophenol appeared on the Ge(100) at larger exposures. The desorption products of C6H5SH were C6H5SH(g), H2(g), GeS(g), H2S(g), and C6H6(g). At 575K, the desorption of thiophenol resulted from the recombination of C6H5S(ad) and H(ad). The surface C6H5S(a) cleaved the carbon-sulfur bond to release the C6H5 bond and reacted with H to desorb benzene. According to the TPD spectra, we propose that benzene has two adsorption states. The desorption of hydrogen with recombination of H(ad) + H(ad) and some hydrogen reacted with surface S to become H2S(g).At 690K, GeS(g) desorbed from the surface due to the cleavage of the Ge-Ge bond. The adsorption features of phenol and thiophenol are almost the same, but the thermal decomposition reactions are different because the carbon-oxygen bond is stable. Phenoxy group cleaves the carbon-oxide bond to produce GeO(g) at higher temperature in the TPD spectra. Three desorption peaks in TPD spectra are observed due to recombination reactions. According to the experimental data and computational result, we propose the reactions mechanisms of C6H5SH and C6H5OH thermal reaction on Ge(100).
author2 Hung, Wei-Hsiu
author_facet Hung, Wei-Hsiu
Jheng, Jhih-Wun
鄭智文
author Jheng, Jhih-Wun
鄭智文
spellingShingle Jheng, Jhih-Wun
鄭智文
Adsorption and Thermal Decomposition of Thiophenol and Phenol on Ge(100)
author_sort Jheng, Jhih-Wun
title Adsorption and Thermal Decomposition of Thiophenol and Phenol on Ge(100)
title_short Adsorption and Thermal Decomposition of Thiophenol and Phenol on Ge(100)
title_full Adsorption and Thermal Decomposition of Thiophenol and Phenol on Ge(100)
title_fullStr Adsorption and Thermal Decomposition of Thiophenol and Phenol on Ge(100)
title_full_unstemmed Adsorption and Thermal Decomposition of Thiophenol and Phenol on Ge(100)
title_sort adsorption and thermal decomposition of thiophenol and phenol on ge(100)
publishDate 2014
url http://ndltd.ncl.edu.tw/handle/88986450897225239143
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