boron and nitrogen co-doped graphene for electronic device

• Main Author: 李佩玲
• Other Authors: 陳貴賢
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/08541437727682048712

碩士 === 國立臺灣師範大學 === 化學系 === 102 === Graphene is thick planar sheets of sp2-bonded carbon atoms. It’s the thinnest and strongest nanomaterials, because of its unique structure and excellent physical properties. It can be widely used in various fields, but the single layer graphene (SLG) energy band gap is close to zero and can not be applied to the semiconductor industry. Band gap opened single layer graphene can be used as semiconductor device. Promising opening band gap techniques for SLG include the quantum confinement, symmetry breaking and chemical doping. In this thesis, BN co-doped graphene was synthesized by thermal chemical vapor deposition using doping of boron and nitrogen. The doping concentrations of BN were controlled by changing the preheating temperature of BH3NH3 and mass flow rate of CH4. Then various band gap graphene will be obtained. The characteristics of the BNC were analyzed by XPS, and Raman spectroscopy. By Hall measurement can observe the change of electrical property of BN doped graphene with different transfer method and different size of area.