Interfacial Layers with Thermal and Hydrogen Treatments on Characteristics of Germanium MOSFETs
碩士 === 國立清華大學 === 工程與系統科學系 === 102
Main Authors: | Li, Mong-Chi, 黎孟琦 |
---|---|
Other Authors: | 張廖貴術 |
Format: | Others |
Language: | zh-TW |
Published: |
2014
|
Online Access: | http://ndltd.ncl.edu.tw/handle/ggb85r |
Similar Items
-
Interfacial Layers with Thermal and Nitrogen Treatments on Electrical Characteristics of Germanium MOSFETs Device
by: Tsai, Chia Chi, et al.
Published: (2015) -
Design, fabrication, and characterization of germanium MOSFETs with high-k gate dielectric stacks based on the nitride interfacial layers
by: Ritenour, Andrew P. (Andrew Paul), 1974-
Published: (2008) -
A Study on Microwave Thermal Effect for Germanium Channel MOSFETs
by: Chi, Wei-Chun, et al.
Published: (2015) -
Thermal Stability Analysis of Interfacial Layer in MOSFETs with High-K Dielectric
by: 許志謙
Published: (2011) -
Electrical and Physical Characteristics of Germanium MOS Device with Interfacial Layer Engineering
by: 李姿旻
Published: (2013)