Thermoelectric transport properties of Bi-Te based thin films with Ag overlaid junction structure

碩士 === 國立清華大學 === 材料科學工程學系 === 102 === Bismuth telluride has been considered as a promising candidate for thin-film thermoelectric (TE) devices due to its superior thermoelectric properties at room temperature regime. Generally, a good thermoelectrics requires a large Seebeck coefficient, a high el...

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Bibliographic Details
Main Authors: Wu, Chen-Chi, 吳鎮吉
Other Authors: Liao, Chien-Neng
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/40204414808667052315

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