Novel Structures of Single/Double Gate MOSFET with Raised Source for Capacitor-less DRAM Application
碩士 === 國立中山大學 === 電機工程學系研究所 === 102 === We propose novel 1T-DRAM cells with raised source structure. The cell using the raised source region can achieve the characteristics of long gate length one in a limited area. And, it can suppress short channel effects because the electric field of drain encro...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/xy4489 |