Characterization of the L-MOS with Different Channel Structures for SONOS application
碩士 === 國立中山大學 === 電機工程學系研究所 === 102 === In this paper, in order to overcome the scale down issue, a novel metal oxide semiconductor field effect transistor with L-shaped channel structure (L-MOS) [1], and new L-shaped channel structure for SONOS-type nonvolatile memory (L-SONOS) are designed and stu...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/32617658099180517466 |