Electrical-Optical Characteristics of Organic Light-Emitting Diodes with Rubrene- Doped Active Layer

• Main Authors: Cian-ci Liou, 劉千綺
• Other Authors: Yi-Tsung Chang
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/874rzq

碩士 === 國立中山大學 === 電機工程學系研究所 === 102 === In this study, the active layer of organic light-emitting devices (OLEDs) of PVK: Rubrene are analyzed material properties and measured OLEDs electrical-optical characteristics. OLEDs structures are ITO (125 nm)/ PEDOT: PSS (65 nm)/ PVK: x wt% Rubrene (y nm)/ Al (100 nm). Each device area is 0.25 cm2. Because of the quenching effect, the active layer of OLEDs doped with 0, 5, 10, 15 wt% Rubrene are investigated. The OLED of the active layer doping with 5 wt% Rubrene has the best electrical-optical characteristics: the transmittance is 91%, the threshold voltage is 10.4V, and the maximum luminous intensity is 0.14 cd/m2. The thickness of the active layer will affect the mobility of carriers and recombination. OLEDs of the active layer with thickness 42, 65,101 nm are designed. The OLED of the thickness of the active layer is 65 nm has the best electrical-optical characteristics: the threshold voltage is 10.6V, and the maximum luminous intensity is 0.27 cd/m2. To discuss the influence of baking temperature on OLED of the active layer, OLEDs with the active layer baking at 60, 80, 100, 120℃ are proposed. The OLED of the active layer baking at 100℃ has the best electrical-optical characteristics: the transmittance is 95.5%, the threshold voltage is 8.8V, and the maximum luminous intensity is 0.18 cd/m2. And the luminous intensity does not increase at a specific angle, so that it does not have the micro-cavity in the OLED.