Study of magnetic and electric properties on GdN thin film

• Main Authors: Cheng-jui Li, 李政叡
• Other Authors: Hsiung Chou
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/86329042415627811591

碩士 === 國立中山大學 === 物理學系研究所 === 102 === Magnetism has attracted the attention of scientists and engineers from very early times and it is still remained favorite subject due to their vast range of application possibilities. Recently, researchers have been interested in coupling the magnetic and electric order parameters to realize advanced data storage devices, diluted magnetic semiconductors, spintronic devices etc. Magnetic thin film systems have been proved great help for researchers in achieving their goal because thin films have advantage that it can be easily tailored as per requirement with varying parameters like thickness, temperature, ambient pressure. GdN is an intrinsic ferromagnetic material having Curie temperature near 70 K. It supports both p-type and n-type carrier conduction depending on nitrogen vacancies. GdN has tremendous potential for application in spintronic devices. For the sake of in-depth analysis of magnetism, carrier concentration, nature of mobile carriers and mobility, we have investigated the magnetic property, Hall effect, electrical transport property and bias voltage effect on GdN ferromagnetic semiconductor.