Quantum anomalous Hall effect in the Haldane-Rashba system

• Main Authors: Chin-Lun Hsiao, 蕭欽倫
• Other Authors: Tsung-Wei Chen
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/66358108074462572910

碩士 === 國立中山大學 === 物理學系研究所 === 102 === We study the possible Chern insulator phase transitions in the Haldane-Rashba system. These systems could be established on single-layer graphene and realized by using the ultracold atoms. Therefore, we investigate the quantum anomalous Hall effect in the Haldane-Rashba systm. We first describe how to construct tight-binding model Hamiltonian and obtain the Dirac points. We then show the electronic band structure and the corresponding wave functions of electrons. By using the boundary of phase transformation we study the change in Chern number in Haldane-Rashba system. Finally, we discuss the variation of Chern number values and its corresponding phase transitions.