Growth of GaN thin films on Pattern Sapphire substrates by Hydride vapor phase epitaxy
碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 102 === In this thesis, the growth of c-plane gallium nitride (GaN) epitaxial films on a patterned sapphire substrate (PSS) by hydride vapor phase epitaxy (HVPE). Gallium chloride (GaCl) formed by the reaction of high purity gallium metal and hydrogen chloride (HCl...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36709243673246140597 |