Study of Resistive Switching Effect in C/ZnO/C Structures With Different Growth Temperatures

• Main Authors: Yang, Cheng-Ying, 楊承鷹
• Other Authors: Hsu, Hua-Shu
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/96266084024225956890

碩士 === 國立屏東教育大學 === 應用物理系 === 102 === We investigated the effects on resistive switching (RS) in Al/C/ZnO/C/Al devices with different growth temperatures. The effects of C inserted layers and oxygen on RRAM processes were studied by complex impedance spectroscopy. We obsered C inserted layers can promote the repeatable redox reaction between the electrode and the ZnO layer. However, the possible diffusion of C into ZnO while C inserted layer is grown at higher temperature decrease the RS effect. Therefore, we suggested the inserted C grown at suitable condition could improve the RS effect and provide a useful way in ZnO based RS device application.