Study of Resistive Switching Effect in C/ZnO/C Structures With Different Growth Temperatures
碩士 === 國立屏東教育大學 === 應用物理系 === 102 === We investigated the effects on resistive switching (RS) in Al/C/ZnO/C/Al devices with different growth temperatures. The effects of C inserted layers and oxygen on RRAM processes were studied by complex impedance spectroscopy. We obsered C inserted layers can pr...
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| Format: | Others |
| Language: | zh-TW |
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2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/96266084024225956890 |
| Summary: | 碩士 === 國立屏東教育大學 === 應用物理系 === 102 === We investigated the effects on resistive switching (RS) in Al/C/ZnO/C/Al devices with different growth temperatures. The effects of C inserted layers and oxygen on RRAM processes were studied by complex impedance spectroscopy. We obsered C inserted layers can promote the repeatable redox reaction between the electrode and the ZnO layer. However, the possible diffusion of C into ZnO while C inserted layer is grown at higher temperature decrease the RS effect. Therefore, we suggested the inserted C grown at suitable condition could improve the RS effect and provide a useful way in ZnO based RS device application.
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