Study of the C/ZnO/C resistvie switching effect by bias-dependent impedance spectroscopy
碩士 === 國立高雄師範大學 === 物理學系 === 102 === We investigated the effects on resistive switching in Al/ZnO/Al devices with different growth temperatures. The effects of C inserted layers under different oxygen pressure on RRAM processes were studied by bias-dependent impedance spectroscopy. Based on further...
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| Format: | Others |
| Language: | zh-TW |
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2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64105048425628220712 |
| Summary: | 碩士 === 國立高雄師範大學 === 物理學系 === 102 === We investigated the effects on resistive switching in Al/ZnO/Al devices with different growth temperatures. The effects of C inserted layers under different oxygen pressure on RRAM processes were studied by bias-dependent impedance spectroscopy. Based on further analysis on the bias-dependent capacitance and resistive parameters, we observed C inserted layers can promote the repeatable redox reaction between the electrode and the ZnO layer. However, the possible diffusion of C into ZnO while C inserted layer is grown at higher temperature decreases the RS effect. We also demonstrated the bias-dependent impedance analysis technique can be used to detect the reliability of the film.
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