Optically excited transport in reactively sputtered ZnO

• Main Authors: Han-Jiang Wu, 吳翰強
• Other Authors: Yue-Lin HUANG
• Format: Others
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/v5z3b3

碩士 === 國立東華大學 === 物理學系 === 102 === Previous studies have successfully grown P-type conductivity of ZnO thin films , by regulating oxygen and nitrogen doping, hoping to find more stable production parameters of the P-type zinc oxide thin films. And observe the electrical properties with different doped ZnO in different kinds of environments. Electrical performance of ZnO nanostructures is very sensitive and effected by its preparation conditions, defect structure and observation of environmental , the preparation of a stable electrical properties of p- type ZnO is still a challenge. This study provides further understanding of ZnO electrical behavior of the experimental evidence, and reference to the literature review, this study used a simple preparation method of reactive sputtering to grow ZnO,and change nitrogen-doped to affect the majority carrier. This study included set up a Photoconductivity measurement systems, combined with a single spectrometer, refrigeration optical measurement system, the main target contains (1) determine the impact of preparation conditions of the carrier; (2) investigate the relationship between Photoconductivity , the excitation wavelength laser light , temperature and the gas atmosphere.