Synchrotron-radiation photoemission study of electronic structures of the K doping at the C60/rubrene heterointerface

• Main Author: 屈郁雅
• Other Authors: Chiu-Ping Cheng
• Format: Others
• Language: zh-TW
• Online Access: http://ndltd.ncl.edu.tw/handle/23342465285014197996

碩士 === 國立嘉義大學 === 電子物理學系光電暨固態電子研究所 === 102 === 　　Using synchrotron-radiation photoemission, we have studied the interfacial electronic structures of C60/K-doped rubrene. We have studied the interfacial properties of the C60/K0.6Rubrene and C60/K-Rubrene, two kinds of K dopant concentration. In C60/K0.6Rubrene case, the valence-band spectra have showed that, because the electron affinity of C60 is larger than that of rubrene, K would diffuse into C60 overlayer and then transfer charges into the lowest unoccupied molecular orbital (LUMO), generating a gap state. However, the results did not reveal in the C60/K-Rubrene case in the photoemission probing depth.In both cases, the existence of the vacuum-level shift indicates the formation of the interfacial dipole, due to the charge transfer for the C60/K0.6Rubrene and the electromagnetic induction for the C60/K-Rubrene. The doping could enlarge the interfacial dipole potential, and enhance the separation between the LUMO of C60 and the highest occupied molecular orbital (HOMO) of rubrene. These results have a large possibility to improve the efficiency of the light- and current-generating organic dual device.