Optical and electrical characterization of InGaN/GaN LED after high temperature and high current aging

• Main Author: 黃振權
• Other Authors: Der-Yuh Lin
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/85289118554147795577

碩士 === 國立彰化師範大學 === 電子工程學系 === 102 === In the study, the LEDs were analyzed by many electrical and optical measurements in thermal and electrical stresses. The optical measurements have photoluminescence mapping, photo-current mapping, photo-voltage mapping, electroluminescent distribution, light-integrated measurement. The electrical measurements have junction temperature, capacitance-voltage(C-V) and current-voltage(I-V) measurement. First, it measured initial characteristic of LEDs before stresses. The LEDs were stressed in the stressed systems. We recorded the changes of I-V, junction-temperature, and L-I measurements on room temperature until 70% of initial photo power. For the results the LEDs generated defects in the active layer at electrical stress. The defects were found by I-V, C-V and electroluminescent distribution measurements. Additionally, the LEDs did not have large defects after thermal stress. The plastic of LEDs were damaged by heat and influenced the efficiency of output photo power. In cording to Arrheniu mode, the active energy is 0.52 eV.