Simulation of Semiconductor Structures with Uniform Electric Field and Study of Franz-Keldysh Oscillations in Modulation Spectroscopy
碩士 === 國立彰化師範大學 === 電子工程學系 === 102 === This thesis consists of both simulation and experimental characterization. For simulation, we use the APSYS software to analyze GaAs p-i-n and surface potential structures with the aim of achieving nearly uniform and strong enough electric fields. The simulatio...
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| Format: | Others |
| Language: | zh-TW |
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2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/y9yd7v |
| Summary: | 碩士 === 國立彰化師範大學 === 電子工程學系 === 102 === This thesis consists of both simulation and experimental characterization. For simulation, we use the APSYS software to analyze GaAs p-i-n and surface potential structures with the aim of achieving nearly uniform and strong enough electric fields. The simulation results help optimize the semiconductor structure so that the Franz-Keldysh oscillations (FKO) in modulation spectroscopy can be well resolved. As for the experimental part, we extract the value of the electric field within semiconductor from the electroreflectance (ER) FKO signal and then evaluate the Schottky barrier height of the metal-GaAs junction. Our results are consistent with the data published elsewhere.
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