The effect on Polycrystalline Silicon Surface Roughness by Electrical Chemical Machining Grinding Using Graphene Oxide Suspension

• Main Authors: Kuen-chih Lan, 藍坤志
• Other Authors: Piin-hwa Yan
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/56961985890911503960

碩士 === 國立中央大學 === 機械工程學系在職專班 === 102 === There are some conclusions gotten from the experiment. The surface roughness and average friction coefficient are 0.092μm and 0.33μ by traditional mechanical grinding process; the surface roughness and average friction coefficient are 0.051μm and 0.10μ by adding 0.5% graphene into solution. The latter surface roughness and friction coefficient is 1.8 times and 3.3 times compared to the former. The research shows that the tribological properties of graphene reduce the friction coefficient of solution and improve the surface roughness on workpiece. The research can be applied to grinding process of silicon wafer. The method can not only simplify the experiment steps but also enhance the process efficiency. The research is expected to be an application reference for industry and academic area.