850-nm Si Avalanche Photodiodes in Standard CMOS Technology with Back-end Process

850-nm Si Avalanche Photodiodes in Standard CMOS Technology with Back-end Process

碩士 === 國立中央大學 === 電機工程學系 === 102 === This study presents lateral avalanche photodetectors (APDs) implemented in standard 0.18 µm CMOS technology operating at 850-nm wavelength. In order to reduce the slow diffusion carriers generated within the Si substrate, it is necessary to utilize simple back-en...

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Main Authors: Chih-Ai Huang, 黃智愛
Other Authors: Yue-ming Hsin
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/84472209886057899199
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spelling ndltd-TW-102NCU054421022015-10-13T23:55:41Z http://ndltd.ncl.edu.tw/handle/84472209886057899199 850-nm Si Avalanche Photodiodes in Standard CMOS Technology with Back-end Process 標準CMOS製程結合後製程之850-nm矽累崩光檢測器 Chih-Ai Huang 黃智愛 碩士 國立中央大學 電機工程學系 102 This study presents lateral avalanche photodetectors (APDs) implemented in standard 0.18 µm CMOS technology operating at 850-nm wavelength. In order to reduce the slow diffusion carriers generated within the Si substrate, it is necessary to utilize simple back-end processes after standard CMOS process to remove thick Si substrate. Silvaco TCAD simulation is used to verify that the diffusion roll-off in APD could be improved by reducing the diffusion component of photo-current by thinning the Si substrate. Furthermore, this study compared different device structures including avalanche photodetectors and P-I-N photodetectors after substrate thinning. Finally, the different absorption region widths of APDs are discussed. While the absorption region width decreased, the amount of diffusion carriers is reduced in photo-current and thus achieved 3-dB bandwidth of 8 GHz. Besides, long tail effect in connection with frequency response can be verified by the pulse measurement. Yue-ming Hsin 辛裕明 2014 學位論文 ; thesis 115 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立中央大學 === 電機工程學系 === 102 === This study presents lateral avalanche photodetectors (APDs) implemented in standard 0.18 µm CMOS technology operating at 850-nm wavelength. In order to reduce the slow diffusion carriers generated within the Si substrate, it is necessary to utilize simple back-end processes after standard CMOS process to remove thick Si substrate. Silvaco TCAD simulation is used to verify that the diffusion roll-off in APD could be improved by reducing the diffusion component of photo-current by thinning the Si substrate. Furthermore, this study compared different device structures including avalanche photodetectors and P-I-N photodetectors after substrate thinning. Finally, the different absorption region widths of APDs are discussed. While the absorption region width decreased, the amount of diffusion carriers is reduced in photo-current and thus achieved 3-dB bandwidth of 8 GHz. Besides, long tail effect in connection with frequency response can be verified by the pulse measurement.
author2 Yue-ming Hsin
author_facet Yue-ming Hsin
Chih-Ai Huang
黃智愛
author Chih-Ai Huang
黃智愛
spellingShingle Chih-Ai Huang
黃智愛
850-nm Si Avalanche Photodiodes in Standard CMOS Technology with Back-end Process
author_sort Chih-Ai Huang
title 850-nm Si Avalanche Photodiodes in Standard CMOS Technology with Back-end Process
title_short 850-nm Si Avalanche Photodiodes in Standard CMOS Technology with Back-end Process
title_full 850-nm Si Avalanche Photodiodes in Standard CMOS Technology with Back-end Process
title_fullStr 850-nm Si Avalanche Photodiodes in Standard CMOS Technology with Back-end Process
title_full_unstemmed 850-nm Si Avalanche Photodiodes in Standard CMOS Technology with Back-end Process
title_sort 850-nm si avalanche photodiodes in standard cmos technology with back-end process
publishDate 2014
url http://ndltd.ncl.edu.tw/handle/84472209886057899199
work_keys_str_mv AT chihaihuang 850nmsiavalanchephotodiodesinstandardcmostechnologywithbackendprocess
AT huángzhìài 850nmsiavalanchephotodiodesinstandardcmostechnologywithbackendprocess
AT chihaihuang biāozhǔncmoszhìchéngjiéhéhòuzhìchéngzhī850nmxìlèibēngguāngjiǎncèqì
AT huángzhìài biāozhǔncmoszhìchéngjiéhéhòuzhìchéngzhī850nmxìlèibēngguāngjiǎncèqì
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