Simulation of Double Gate Junctionless MOSFET and Temperature Dependence of Threshold Voltage
碩士 === 國立中央大學 === 電機工程學系 === 102 === This thesis uses the C++ to develop an adapted band matrix solver to simulate the I-V curve and the drain current of the 2-D double-gate n-channel MOSFET. And it discusses the threshold voltage from the I-Vg curve and selects the appropriate doping concentration...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13479381623399226569 |