Simulation of Double Gate Junctionless MOSFET and Temperature Dependence of Threshold Voltage

• Main Authors: Guang-Ming Zhang, 張光明
• Other Authors: Yao-Tsung Tsai
• Format: Others
• Language: en_US
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/13479381623399226569

碩士 === 國立中央大學 === 電機工程學系 === 102 === This thesis uses the C++ to develop an adapted band matrix solver to simulate the I-V curve and the drain current of the 2-D double-gate n-channel MOSFET. And it discusses the threshold voltage from the I-Vg curve and selects the appropriate doping concentration and channel thickness to complete the following experiments. The I-Vg curve will be simulated to determine threshold voltage. The I-V curve can calculate drain current in different gate voltage. The results can be compared with the other reference papers. The depletion width can be obtained as an analytical equation. The analytical depletion width can be verified by the 2-D simulation. The 2-D simulation also verifies the result with the drain current equation which is obtained by Poisson’s equation. The equations of the threshold voltage can be developed, and the threshold voltage of double-gate n-channel MOSFET can be calculated. Afterword, this paper will simulate and discuss the correction between threshold voltage and temperature. This paper will include the thermal voltage and intrinsic doping concentration of temperature in the C++ program. After simulating, the value of simulation will be compared with the value of the reference paper to confirm the trend of threshold voltage. For circuit application, an inverter including a double-gate n-channel MOSFET and a 100 kΩ resistor will be used to simulate the Vo-Vi characteristics and analyzes the parameters of the inverter, and the noise margin will be calculated in order to determine the inverter’s performance and quality.