Analysis and simulation of 3-D Gate-All-Around Transistor
碩士 === 國立中央大學 === 電機工程學系 === 102 === In this thesis, we use the three-dimensional device simulation to simulate the gate-all-around MOSFET device characteristics. Using the gate-all-around MOSFET characteristics, we cut the full device into one fourth device to speed up the simulation. Then ,we stu...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04925226925387115363 |
| Summary: | 碩士 === 國立中央大學 === 電機工程學系 === 102 === In this thesis, we use the three-dimensional device simulation to simulate the gate-all-around MOSFET device characteristics. Using the gate-all-around MOSFET characteristics, we cut the full device into one fourth device to speed up the simulation. Then ,we study the dependance of threshold voltage on the substrate thickness in the gate-all-around MOSFET. At last , we analyze characteristics of the junctionless MOSFET and conventional MOSFET. The basic operating principles of the two MOSFETs will be compared. We discuss how to choose poly-gate type on these two MOSFETs. Finally, we change the parameters to study the impact to these two MOSFETs.
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