| Summary: | 碩士 === 國立中央大學 === 能源工程研究所 === 102 === The thermal management of the inverter is of great importance since very high voltage/current will be switched intermittently and/or continuously and high temperature is excruciably detrimental to the service life of electronics such as insulated gate bipolar transistor (IGBT). In this study, a newly developed dual bi-directional IGBT-based inverter with autonomous microgrid system is investigated with particular focus on the thermal management under various operation conditions. The module is operated at the switching and pulse frequencies of 60 Hz and 20 kHz, respectively. The adoption of thermal interface material in either paste or film form had experimentally shown to possess the flexibility tailoring heat transfer performance locally. Experimental studies of heat dissipating film with various hotspot scenarios showed that the temperature difference can be appreciably reduced as many as 15.4°C and 13.1°C, respectively with facilitation of one- and two- layers of heat dissipating film. From the measurement results, the measured peak temperature is highly dominated by the thickness of heat dissipating film, showing the dominance of thickness-dependent thermal resistance and resultant heat accumulation.
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