Study on optical and electrical characteristic of vertical light emitting diode device

• Main Authors: Lee,Yaon-Chu, 李彥助
• Other Authors: Kuo,Hao-Chung
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/k7drsz

碩士 === 國立交通大學 === 平面顯示技術碩士學位學程 === 102 === Light-Emitting Diode has the potential to be developed into the mainstream device of cutting edge solid state lighting. Currently, research on LED has its focus on high power and large area (above 1×1 mm2) LED [1]. High power means the heat generated by LED is also of large amount, hence, the research on heat dissipation is also the focus of research. As compared to the traditional sapphire-based LED, for example, the co-planar p type and n type electrodes of Face-up LED and Flip-chip LED, vertical LED has the newest structure, and it also owns better current distribution and heat dissipation capability. Under the same chip size, the electrode masking area is lower, the light-emitting area is the largest, hence, it has the most advantage to be developed into large area (larger than 40 mils) and high power LED. It has both high lumen output and high efficiency, and it is the most crucial optical source technology in the future LED lighting industry. Currently, the package unit of vertical LED or thin GaN LED includes two high temperature bonding processes, one is the substrate transfer process during the chip processing, and the second is the subsequent high temperature die bonding during the packaging process. Double bonding surface is generated by at least two times of high temperature bonding, it not only increases the interface heat resistance, but also reduces packaging yield and reliability. Therefore, innovative vertical LED structure and its manufacturing technology can enhance the photo-thermal property, yield and reliability of the vertical LED, and it will become the key technology of future lighting grade LED optical source. If we take a look from the view point of LED packaging, in addition to providing LED chip protection and electric characteristic, the package’s good thermal conduction and high reliability is also key characteristic of high power LED packaged device. LED wafer-level package (WLP) has its niche today, it is the best technical channel for a semiconductor players to get into the field of solid state lighting industry, hence, it is going to become key crucial technology in the eruption and growth of the next wave solid date lighting.