Electrical Resistivity Minimization of Chemical Vapor Deposited Titanium Nitride Barrier layers and Tungsten plugs for Integrated Circuit Interconnects
碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 102 === To scale-down dynamic random access memories (DRAMs) to the 40-30 nm nodes, it is desirable to have materials of better gap filling and lower resistivity for metal interconnects to meet the design criteria. Titanium nitride (TiN) and tungsten (W) are cu...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67572700598624925043 |