| Summary: | 碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 102 === In this study, locally laser doping on emitter was used to improve commercial crystalline silicon base solar cell efficiency. In phosphor diffusion process, P2O5 deposition of POCl3 pre-deposition and phosphor drive-in step was investigated. After simulation, ligh doping and shallow junction emitter was used to improve spectral response at short wavelength, reduce carrier recombination, improve probability of carrier collection. The maior topic is laser doping to perform heavy doping emitter underneath metal contact area (selective emitter) to lower the contact resistance. PSG was deposited on the top of contact area to offer the source of phosphor doping followed by scanning with 532nm green light laser. By this approach, the performance of solar cell was improved.
|
|---|
