Investigation of the reflective electrode metal pad on Hole Structure Current Blocking Layer in GaN-based light emitting diodes
碩士 === 國立交通大學 === 光電科技學程 === 102 === In this study, the adhesion of the n and p reflective electrode (Cr/Al/Cr/Pt/Au) on GaN-based light-emitting diode (LED) was investigated. The application of a hole structure on the current blocking layer (CBL) and the transparent conductive layer (TCL) predictab...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39pvx4 |