Direct Conversion Receiver Using Active Bandpass Filter for Channel Select and Characterization of RF Device.
碩士 === 國立交通大學 === 電信工程研究所 === 102 === This thesis focuses on the application of wireless communication network, using the TSMC 0.18um CMOS process designs to achieve the RF circuits. It is divided into two parts. The first part is active filter and its application to 5GHz channel select receiver. Th...
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ndltd-TW-102NCTU54350422016-07-02T04:20:30Z http://ndltd.ncl.edu.tw/handle/18268788394087470275 Direct Conversion Receiver Using Active Bandpass Filter for Channel Select and Characterization of RF Device. 用主動帶通濾波器做頻道選擇的直接降頻接收機和射頻元件的特性分析 Chuang, Ge-Wei 莊格瑋 碩士 國立交通大學 電信工程研究所 102 This thesis focuses on the application of wireless communication network, using the TSMC 0.18um CMOS process designs to achieve the RF circuits. It is divided into two parts. The first part is active filter and its application to 5GHz channel select receiver. The second part is the characteristic measurement of RF device. The RF components contain Schottky diode and two kinds of bipolar transistors─SiGe HBT and CMOS Vertical-npn BJT. In the chapter 2, we discuss the design method of high sideband rejection bandpass filter and the technique of Q-enhancement. Then, we discuss mixed-mode S parameter and noise calibration related to differential I/O circuit. In the chapter 3, we implement the 5GHz direct conversion receiver using tunable active filter for channel select. In the chapter 4, we focus on the key components of RF circuits─Schottky diode. We implement and measure the diode testkey and the combination of different mask forms anti-parallel diode pair. Finally, we measure the DC characteristics of SiGe 0.18um HBT and CMOS parasitic Vertical-npn. Meng, Chin-chun 孟慶宗 2013 學位論文 ; thesis 131 zh-TW |
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碩士 === 國立交通大學 === 電信工程研究所 === 102 === This thesis focuses on the application of wireless communication network, using the TSMC 0.18um CMOS process designs to achieve the RF circuits. It is divided into two parts. The first part is active filter and its application to 5GHz channel select receiver. The second part is the characteristic measurement of RF device. The RF components contain Schottky diode and two kinds of bipolar transistors─SiGe HBT and CMOS Vertical-npn BJT.
In the chapter 2, we discuss the design method of high sideband rejection bandpass filter and the technique of Q-enhancement. Then, we discuss mixed-mode S parameter and noise calibration related to differential I/O circuit.
In the chapter 3, we implement the 5GHz direct conversion receiver using tunable active filter for channel select.
In the chapter 4, we focus on the key components of RF circuits─Schottky diode. We implement and measure the diode testkey and the combination of different mask forms anti-parallel diode pair. Finally, we measure the DC characteristics of SiGe 0.18um HBT and CMOS parasitic Vertical-npn.
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author2 |
Meng, Chin-chun |
author_facet |
Meng, Chin-chun Chuang, Ge-Wei 莊格瑋 |
author |
Chuang, Ge-Wei 莊格瑋 |
spellingShingle |
Chuang, Ge-Wei 莊格瑋 Direct Conversion Receiver Using Active Bandpass Filter for Channel Select and Characterization of RF Device. |
author_sort |
Chuang, Ge-Wei |
title |
Direct Conversion Receiver Using Active Bandpass Filter for Channel Select and Characterization of RF Device. |
title_short |
Direct Conversion Receiver Using Active Bandpass Filter for Channel Select and Characterization of RF Device. |
title_full |
Direct Conversion Receiver Using Active Bandpass Filter for Channel Select and Characterization of RF Device. |
title_fullStr |
Direct Conversion Receiver Using Active Bandpass Filter for Channel Select and Characterization of RF Device. |
title_full_unstemmed |
Direct Conversion Receiver Using Active Bandpass Filter for Channel Select and Characterization of RF Device. |
title_sort |
direct conversion receiver using active bandpass filter for channel select and characterization of rf device. |
publishDate |
2013 |
url |
http://ndltd.ncl.edu.tw/handle/18268788394087470275 |
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